XST-MOS-L13N45F N-channel MOSFET fast switching NMOS diodes transistor
XST-MOS-L13N45F
minimum order
1 piece
Quantity
- Model Number:XST-MOS-L13N45F
- Type:MOS
- Place of Origin:Guangdong, China
- Brand Name:xunster
- Package Type:Surface Mount
- Supplier Type:Agency
- Media Available:datasheet
- Drain-Source Voltage:450V
- Continuous(Tc=25℃)-Continuous(Tc=100℃):13.0*A
- Drain Current-Pulsed (Note1):44*A
- Gate-Source Voltage:±25V
- Single Pulsed Avalanche Energy (Note2):360mJ
- Avalanche Current (Note1):13.0A
- Repetitive Avalanche Energy (Note1):19.5mJ
- Peak Diode Recovery dv/dt (Note3):4.5V/ns
- (Tc =25℃) -Derate above 25℃:39W
- Storage Temperature Range:-55 to+150℃
XST-MOS-L13N45F is a 450V 13A N-channel MOSFET with low gate charge, fast switching,100% avalanche tested, improved dv/dt capability.It has the characteristics of high input impedance, low noise, good thermal stability and simple manufacturing process, etc. It is widely used in high frequency switching mode power supply, active power factor correction.
| Characteristic | Symbol | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage (ID = 250uA,VGS=0V) | BVDSS | 20 | _ | _ | V |
| Gate Threshold Voltage (ID = 250uA,VGS= VDS) | VGS(th) | 0.45 | _ | 1.2 | V |
| Diode Forward Voltage Drop (IS= 0.75A,VGS=0V) | VSD | _ | _ | 1.3 | V |
| Zero Gate Voltage Drain Current (VGS=0V, VDS= 16V) (VGS=0V, VDS= 16V, TA=55℃) | IDSS | _ | _ | 1 10 | uA |
| Gate Body Leakage (VGS=+8V, VDS=0V) | IGSS | _ | _ | ±100 | nA |
| Static Drain-Source On-State Resistance (ID=4.2A,VGS=4.5V) (ID=2A,VGS=2.5V) (ID=1A,VGS=1.8V) | RDS(ON) | _ | 25 30 50 | 30 40 60 | mΩ |
| Input Capacitance (VGS=0V, VDS= 10V,f=1MHz) | CISS | _ | _ | 650 | pF |
| Common Source Output Capacitance (VGS=0V, VDS= 10V,f=1MHz) | COSS | _ | _ | 150 | pF |
| Turn-ON Time (VDS= 10V, ID= 3.5A, RGEN=10Ω) | t(on) | _ | _ | 20 | ns |
| Turn-OFF Time (VDS= 10V, ID= 3.5A, RGEN=10Ω) | t(off) | _ | _ | 60 | ns |
Comprehensive score