XST-KKG-MCR100-8 unidirectional thyristor semiconductor for vacuums
XST-KKG-MCR100-8
minimum order
1 piece
Quantity
- Model Number:XST-KKG-MCR100-8
- Type:scr
- Place of Origin:Guangdong, China
- Brand Name:Xunster
- Supplier Type:Agency
- Media Available:datasheet
- Operating Temperature:-40~110℃
- Repetitive Peak Off-State Voltage:600V
- Average On-state Current:0.6A
- R.M.S On-State Current:0.8A
- Surge On-State Current:10A
- I²t for fusing:0.4A²s
- Average Gate Power Dissipation:0.1W
- Peak Gate Power Dissipation:0.5W
- Operating Junction Temperature:-40~110℃
- Storage Temperature:-40~150℃
Unidirectional thyristor is a four-layer three-terminal semiconductor device composed of three PN junctions. Compared with a diode with one PN junction, the forward conduction of unidirectional thyristor is controlled by the current of the control electrode. Compared with the triode with two PN junctions, the difference is that the thyristor has no amplification effect on the control electrode current.
| Symbol | Parameter | Conditions | Ratings | Unit |
| VDRM VRRM | Repetitive Peak Off-State Voltage | BT169D | 600 | V |
| IT(AV) | Average On-state Current | 0.6 | A | |
| IT(RMS) | R.M.S On-State Current | 0.8 | A | |
| ITSM | Surge On-State Current | F=50Hz Tp=10ms | 10 | A |
| I²t | I²t for fusing | Tp=10ms | 0.4 | A²s |
| PG(AV) | Average Gate Power Dissipation | Tj=125℃ | 0.1 | W |
| PGM | Peak Gate Power Dissipation | tp=20us Tj=125℃ | 0.5 | W |
| Tj | Operating Junction Temperature | -40~110 | ℃ | |
| TSTG | Storage Temperature | -40~150 | ℃ |
| Symbol | Parameter | Test Conditions | Value | Unit |
| IDRM | Repetitive Peak Off-State Current | Tc=25℃ | ≤5 | uA |
| Tc=110℃ | ≤100 | uA | ||
| IRRM | Repetitive Peak Reverse Current | Tc=25℃ | ≤5 | uA |
| Tc=110℃ | ≤100 | uA | ||
| VTM | Forward"on"voltage | IT=1.2A tp=380us | ≤1.7 | V |
| VGD | Gate non-trigger voltage | VD=VDRM, Tj=110℃,RGK=1kΩ,RL=3.3KΩ | ≥0.1 | V |
| VGT | Gate trigger voltage | VD=12V ,IT=0.1A | ≤0.8 | V |
| IH | Holding current | IT=50mA | ≤4 | mA |
| IL | Latching current | IG=1.2 IGT | ≤6 | mA |
| IGT | Gate trigger current | VD=12V ,IT=0.1A | ≤200 | uA |
| dv/dt | Critical-rate of rise of commutation voltage | TJ=110℃,VD=2/3VDRM, RGK=1KΩ | ≥10 | V/us |
Comprehensive score