XST-IGBT-CMS8324 insulated gate bipolar transistor semiconductor diodes transistor

• Model Number:XST-IGBT-CMS8324
• Type:IGBT
• Place of Origin:Guangdong, China
• Brand Name:xunster
• Package Type:Surface Mount
• Supplier Type:Agency
• Media Available:datasheet
• supply voltage:30V
• Input frequency:100KHz
• Theta JA package thermal impedance (1):160℃/W
• power waste:625mW
• Maximum working junction temperature:150℃
• welding temperature:260℃,10s
• Storage temperature range:150℃

Xst-igbt-cms8324 power tube driving circuit includes 3-way NMOS power tube driving circuit and 3-way PMOS power tube driving circuit. When the working voltage of the circuit is 24V, the internal control circuit can make the grid voltage when the PMOS power tube is turned on about 12V (that is, the VGS voltage of the PMOS power tube is about - 12V).