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Insulated Gate Bipolar Transistor
Insulated Gate Bipolar Transistor
Insulated Gate Bipolar Transistor
Insulated Gate Bipolar Transistor
Insulated Gate Bipolar Transistor

XST-IGBT-CMS6971 bipolar Transistor semiconductor diodes transistor

XST-IGBT-CMS6971
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  • Model Number:XST-IGBT-CMS6971
  • Type:Other
  • Place of Origin:Guangdong, China
  • Brand Name:xunster
  • Package Type:Surface Mount
  • Supplier Type:Agency
  • Media Available:datasheet
  • 5V power supply voltage:40V
  • Driving power supply voltage:40V
  • LDO Output voltage:6V
  • LDO Output current:100mA
  • High side output voltage:2V
  • Low side output voltage:12V
  • Logic input voltage:6V
  • Maximum power consumption (Note 1):1.4W
  • Junction temperature:150℃
  • ESD (Note 2):2000V

 

 

Xst-igbt-cms6971 integrates 5V LDO with load capacity of 60mA, which can supply power for internal logic of the chip and external MCU. The chip integrates various protection functions such as undervoltage protection, input direct protection and startup protection, and has a built-in dead time of 300ns, which can effectively protect the normal operation of the system. The external P / NMOS power transistor can be well driven by outputting 11V driving voltage and matching excellent leakage current capability.

 

 

(TA = 25 ℃, VM = 12V, nu = NV = NW = GND, all pins take GND as the reference point, unless otherwise specified)      
parameterSymbolTest conditionsminimum valueTypical valueMaximumCompany
Power supply current parameters
VBB Quiescent currentIBBQVHIN=VLIN=0-400-uA
VBB Dynamic currentIBBDfLIN=20kHz-1.4-uA
Power supply voltage parameters
VCC Undervoltage high level potentialVBBHY+ -8.5-V
VBB Undervoltage low level potentialVBBHY- -8-V
VBB Undervoltage hysteresis levelVBBHY -0.5-V
Time parameter
When the rising edge of the output is transmittedtonNo Load-200-ns
Output falling edge transmission timetoffNo Load-200-ns
HO Output rise timeTrise_HCL=1nF-60-ns
HO Output falling timeTfall_HCL=1nF-200-ns
LO Output rise timeTrise_HCL=1nF-170-ns
LO Output falling timeTfall_HCL=1nF-55-ns
Dead TimeDTNo Load-300-ns
High and low side matching timeMTTON & TOFF--50ns