XST-IGBT-CMS6126 power transistor insulated gate bipolar transistor semiconductor

• Model Number:XST-IGBT-CMS6126
• Type:Other
• Place of Origin:Guangdong, China
• Brand Name:xunster
• Package Type:Surface Mount
• Supplier Type:Agency
• Media Available:datasheet
• High side floating absolute voltage:625V
• High side floating supply offset voltage:VB+0.3V
• High side floating output voltage:VB+0.3V
• Low side and logic fixed supply voltage:25V
• Low side output voltage:VCC+0.3V
• Logic input voltage (HIN & LIN):10V
• voltage transient:50 V/ns
• Package power dissipation @ TA ≤ +25°C:1W
• junction to ambient:125 °C/W
• Junction temperature:300°C

Cms6126 is a single-phase high-voltage high-speed gate drive IC designed for bridge circuit composed of double n-channel VDMOS power transistor or IGBT. It can be applied to applications such as DC brushless motor and DC brushless motor. Cms6126 controls the high side drive circuit output (HO) and low side drive circuit output (LO) respectively through input signals (hin and Lin). The built-in 320ns dead time is the minimum dead time. When the dead time of the MCU output signal is greater than the built-in dead time, the actual dead time is the dead time set by the MCU. Built in VCC and VBS undervoltage (UVLO) protection function can prevent the system from opening the external power tube at low driving voltage.