0
insulated gate bipolar transistor
insulated gate bipolar transistor
insulated gate bipolar transistor
insulated gate bipolar transistor
insulated gate bipolar transistor

Semiconductor transistor XST-IGBT-CMS8324C insulated gate bipolar transistor

XST-IGBT-CMS8324C
minimum order
1 piece
Quantity
Contact Now
add to cart
  • Model Number:XST-IGBT-CMS8324C
  • Type:IGBT
  • Place of Origin:Guangdong, China
  • Brand Name:xunster
  • Package Type:Surface Mount
  • Supplier Type:Agency
  • Media Available:datasheet
  • supply voltage:30V
  • Input frequency:100KHz
  • JA package thermal impedance (1):160℃/W
  • power waste:1250mW
  • Maximum working junction temperature:150℃
  • welding temperature:260℃,10s
  • Storage temperature range:150℃

 

 

Xst-igbt-cms8324c power tube driving circuit includes 3-way NMOS power tube driving circuit and 3-way PMOS power tube driving circuit. 78l05 three terminal voltage regulator is integrated in the circuit, which can provide stable 5V output power supply. When the working voltage of the circuit is 24V, the internal control circuit can make the shed voltage when the PMOS power tube is turned on about 12V (that is, the VGS voltage of the PMOS power tube is about - 12).

 

 

(TA = 25 ℃, VM = 12V, nu = NV = NW = GND, all pins take GND as the reference point, unless otherwise specified)     
parameterTest conditionsminimum valueTypical valueMaximumCompany
IVCC  Quiescent currentVCC1=12V121620mA
VO 78L05 output voltage 4.855.2V
8V ≤ VI ≤ 16V
1mA ≤ IO ≤ 40mA
4.7555.25V
1mA ≤ IO ≤ 70mA4.7555.25V
VOI 78L05 Linear adjustment rate8V ≤ VI ≤ 16V-32150mV
VOL 78L05 Load adjustment rate1mA ≤ IO ≤ 100mA-1560mV
1mA ≤ IO ≤ 40mA-830mV
TOTP 78L05 Over temperature protection -150-℃