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Laser Positioning Displacement Monitoring
Laser Positioning Displacement Monitoring
Laser Positioning Displacement Monitoring
Laser Positioning Displacement Monitoring
Laser Positioning Displacement Monitoring

XST-81414-1 14mm Four-quadrant Optoelectronic Detector For Laser Positioning Displacement Monitoring

XST-81414-1
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  • Model Number:XST-81414-1
  • Type:Laser Diode
  • Place of Origin:Guangdong, China
  • Brand Name:Xunster
  • Package Type:Through Hole
  • Max. Forward Voltage:80V
  • Brand:14mm Four-quadrant Optoelectronic Detector
  • Operating Temperature:-55~+125℃
  • Mounting Type:Through Hole
  • Diameter of photosensitive surface:14mm
  • Spectral response range:400-1100nm
  • Working voltage:50V
  • The responsivity:0.3μA/μW
  • Junction capacitance:20pF
  • Rise time:20ns
  • Dark current:0.1μA
  • Reverse breakdown voltage:100V

Introduce
The four-quadrant photodetector is mainly based on the advanced semiconductor process production line owned by the company, using high-resistance silicon single crystal material as the chip substrate, quadrants anti-crosstalk independent patented technology design and production method, independent design and production of sensor chip; In addition, the unique shell production and packaging technology, improve the component anti-overload and electromagnetic interference ability. The device has a spectral response range of 400nm to 1100nm, featuring high responsiveness, low dark current and high reliability.

 

Features
Photosensitive surface: Φ14mm, Φ16mm
High responsiveness: ≥0.3μA/μW
Low dark current: ≤100nA
Small junction capacitance: ≤20pF
Low cross talk: ≤3%
High uniformity, high consistency
Small blind area, high sensitivity
Stable and reliable performance

 

Application
Laser guidance
Laser tracking, positioning, ranging
Other photoelectric detection

 

 

Product modelOperating voltage (V)Operating temperature range (℃)Storage temperature range (℃)
81414-180-45~+85-55~+125
81416-180-45~+85-55~+125

 

 
Product
model
Parameter namesymbolTest conditions (TC=22±3℃)Min.Typ.Max.Unit
81414-1
81416-1
Diameter of photosensitive surfaceD--14,16-mm
Spectral response rangeλ-40010641100nm
Working voltageV--50-V
The responsivityReλ=1064nm;VR=50V0.3--μA/μW
Junction capacitanceCjf=1MHz;VR=50V--20pF
Rise timeTrλ=1064nm;VR=50V--20ns
Dark currentIdVR=50V--0.1μA
Reverse breakdown voltageUBRIR=10μA100--V