XST-81414-1 14mm Four-quadrant Optoelectronic Detector For Laser Positioning Displacement Monitoring
- Model Number:XST-81414-1
- Type:Laser Diode
- Place of Origin:Guangdong, China
- Brand Name:Xunster
- Package Type:Through Hole
- Max. Forward Voltage:80V
- Brand:14mm Four-quadrant Optoelectronic Detector
- Operating Temperature:-55~+125℃
- Mounting Type:Through Hole
- Diameter of photosensitive surface:14mm
- Spectral response range:400-1100nm
- Working voltage:50V
- The responsivity:0.3μA/μW
- Junction capacitance:20pF
- Rise time:20ns
- Dark current:0.1μA
- Reverse breakdown voltage:100V
Introduce
The four-quadrant photodetector is mainly based on the advanced semiconductor process production line owned by the company, using high-resistance silicon single crystal material as the chip substrate, quadrants anti-crosstalk independent patented technology design and production method, independent design and production of sensor chip; In addition, the unique shell production and packaging technology, improve the component anti-overload and electromagnetic interference ability. The device has a spectral response range of 400nm to 1100nm, featuring high responsiveness, low dark current and high reliability.
Features
Photosensitive surface: Φ14mm, Φ16mm
High responsiveness: ≥0.3μA/μW
Low dark current: ≤100nA
Small junction capacitance: ≤20pF
Low cross talk: ≤3%
High uniformity, high consistency
Small blind area, high sensitivity
Stable and reliable performance
Application
Laser guidance
Laser tracking, positioning, ranging
Other photoelectric detection




| Product model | Operating voltage (V) | Operating temperature range (℃) | Storage temperature range (℃) |
| 81414-1 | 80 | -45~+85 | -55~+125 |
| 81416-1 | 80 | -45~+85 | -55~+125 |

| Product model | Parameter name | symbol | Test conditions (TC=22±3℃) | Min. | Typ. | Max. | Unit |
| 81414-1 81416-1 | Diameter of photosensitive surface | D | - | - | 14,16 | - | mm |
| Spectral response range | λ | - | 400 | 1064 | 1100 | nm | |
| Working voltage | V | - | - | 50 | - | V | |
| The responsivity | Re | λ=1064nm;VR=50V | 0.3 | - | - | μA/μW | |
| Junction capacitance | Cj | f=1MHz;VR=50V | - | - | 20 | pF | |
| Rise time | Tr | λ=1064nm;VR=50V | - | - | 20 | ns | |
| Dark current | Id | VR=50V | - | - | 0.1 | μA | |
| Reverse breakdown voltage | UBR | IR=10μA | 100 | - | - | V |
Comprehensive score