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photoelectric detection
photoelectric detection
photoelectric detection
photoelectric detection
photoelectric detection

Four quadrant laser receiver 83404-1/83406-1/83408-1/83410-1A/83410-2 for photoelectric detection

XST-83404-1
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  • Model Number:XST-83404-1
  • Type:Laser Diode
  • Place of Origin:Guangdong, China
  • Brand Name:Xunster
  • Package Type:Through Hole
  • Max. Forward Voltage:13.5V
  • Brand:Four quadrant laser receiver
  • Operating Temperature:-40~+60℃
  • Mounting Type:Through Hole
  • Dark background noise:12mV
  • The output resistance:50Ω
  • Maximum output voltage:4.5-5.5V
  • Output voltage pulse width:100ns
  • Spectral response range:400-1100nm
  • concentricity:0.1mm

Introduce
34XX four-quadrant laser receiver series is mainly based on the advanced semiconductor process production line owned by the company, using high-resistance silicon single crystal material as the chip substrate, quadrants anti-crosstalk independent patented technology design and production method, independent design and production of four-quadrant sensor chip; At the same time, complete the development and production of high SNR front-end and main amplifier circuit; In addition, the unique shell production and packaging technology, improve the component anti-overload and electromagnetic interference ability.
The 34XX four-quadrant laser receiver series currently has five models. Its performance parameters are detailed in the"Technical Index List". It is mainly composed of four-quadrant Si-PIN detector chip and integrated circuit package of front and main amplifier module with gain control function. It can respond to laser pulse signal with receiving width of 10ns and above. It has two-stage gain control function and dynamic range is greater than 120dB. The 3410-2 laser receiver is mainly composed of TO-25 package and custom size and shape of the main amplifier and gain control circuit. It has the characteristics of low noise, high responsiveness and low power consumption.

 

Features
Responsiveness: ≥1.2×105 V/W
Noise: 12 mv or less
Dynamic range: ≥120dB
High uniformity
No crosstalk
Anti-bright background, anti-electromagnetic interference
Stable and reliable performance
High integration, small volume

 

Application
Laser guidance
Laser positioning and tracking
Photoelectric collimation system
Other photoelectric detection

 

Product modelDetector placement voltage (V)Supply voltage (V)Front-end gain control voltage (V)Main amplifier gain control voltage (V)Operating temperature range (℃)Storage temperature range (℃)
3406-110013.513.513.5-40~+60-50~+65
3408-1
3410-1A
3410-2

 

 
Control seriesParameter namesymbolTest conditions (TC=22±3℃)parameter value  Unit
Three levels of controlDrop bias attenuation multipleKVzk=12V;
Vqk1=12V;Vqk2=12V
VR =50V/1V
4--times
The drop bias attenuation is inconsistentδK --7%
concentricity----0.1mm
Blind zone width----0.03mm
Pulse polarity-Working state-positive--
Secondary controlNumber of quadrant---4--
Diameter of photosensitive surfaceD--10,8,6-mm
Spectral response rangeλ-40010641100nm
The responsivityReλ=1064nm;
τ=20ns;
VR=80V;
VCC=12V
1.2×105--V/W
Output voltage pulse widthTw100--ns
Maximum output voltageVomax4.555.5V
Responsiveness inconsistency between quadrantsδRe--10%
Cross talk between quadrantsSL--3%
The output resistanceRo--50Ω
Dark background noiseVnrmsVR =80V;VCC=12V--12mV
Forward gain attenuation multipleKqλ=1064nm
τ=20ns;VR=80V;
VCC=12V;Vqk=12V
162024times
Front-end gain attenuation is inconsistentδq--5%
Main amplifier gain attenuation multipleKzλ=1064nm;
τ=20ns;VR=80V;
VCC=12V;Vzk=12V
162024times
The main amplifier gain attenuation is inconsistentδz--5%
Drop bias attenuation multipleKλ=1064nm;
τ=20ns;VCC=12V;
Vqk=12V;Vzk=12V
VR =80V/1V
456times
The drop bias attenuation is inconsistentδK--7%
concentricity----0.1mm
Blind zone width----0.03mm
Pulse polarity-Working state- --