One-board computer XST-IGBT-CMS6164 microcontroller unit
XST-IGBT-CMS6164
minimum order
1 piece
Quantity
- Model Number:XST-IGBT-CMS6164
- Type:Other
- Place of Origin:Guangdong, China
- Brand Name:xunster
- Package Type:Surface Mount
- Supplier Type:Agency
- Media Available:datasheet
- High side offset absolute voltage:225V
- High side offset relative voltage:VB1,2,3+0.3V
- High side output voltage:VB1,2,3+0.3V
- Maximum supply voltage:25V
- Low side output voltage:VCCV
- Maximum input voltage( HIN/LIN ):10V
- Maximum voltage rate of offset voltage:50V/ns
- Maximum power consumption (Note 1):1.25W
- Junction temperature:150℃
- ESD (Note 3):2000V
Xst-igbt-cms6164 controls the high side drive circuit output (HO) and low side drive circuit output (LO) respectively through input signals (hin and Lin). The built-in 310ns dead time is the minimum dead time. When the dead time of the MCU output signal is greater than the built-in dead time, the actual dead time is the dead time set by the MCU. Built in VCC and VBS undervoltage (UVLO) protection function can prevent the system from opening the external power tube at low driving voltage.
| (TA = 25 ℃, VM = 12V, nu = NV = NW = GND, all pins take GND as the reference point, unless otherwise specified) | ||||||
| parameter | Symbol | Test conditions | minimum value | Typical value | Maximum | Company |
| Power supply current parameters | ||||||
| VCC Quiescent current | ICCQ | VLIN=0 | 200 | 300 | 450 | uA |
| VBS Quiescent current | IBSQ | VHIN=0 | 30 | 48 | 70 | uA |
| VCC Dynamic current | ICCD | fLIN1,2,3=20kHz | - | 560 | - | uA |
| VBS Dynamic current | IBSD | fHIN1,2,3=20kHz | - | 180 | - | uA |
| VB Floating power leakage current | ILK | VB=225V | - | - | 0.1 | uA |
| Power supply voltage parameters | ||||||
| VCC Undervoltage high level potential | VCCHY+ | 6.5 | 7 | 7.5 | V | |
| VCC Undervoltage high level potential | VCCHY- | 5.8 | 6.3 | 6.8 | V | |
| VCC Undervoltage hysteresis level | VCCHY | 0.4 | 0.7 | - | V | |
| VBS Undervoltage high level potential | VBSHY+ | 6.5 | 7 | 7.5 | V | |
| VBS Undervoltage high level potential | VBSHY- | 5.8 | 6.3 | 6.8 | V | |
| VBS Undervoltage hysteresis level | VBSHY | 0.4 | 0.7 | - | V | |
| VS Static negative pressure | VSQN | - | -5 | - | V | |
| Time parameter | ||||||
| When the rising edge of the output is transmitted | ton | No Load | - | 320 | - | ns |
| Output falling edge transmission time | toff | No Load | - | 320 | - | ns |
| Output rise time | tr | CL=3.3nF | - | 85 | 80 | ns |
| Output falling time | tf | CL=3.3nF | - | 45 | 40 | ns |
| Dead Time | DT | No Load | - | 320 | - | ns |
| High and low side matching time | MT | - | - | 50 | ns | |
Comprehensive score