MOSFET XST-MOS-L3401 electronic device diodes transistor

XST-MOS-L3401

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Model Number:XST-MOS-L3401
Type:SWITCHING DIODE
Place of Origin:Guangdong, China
Brand Name:xunster
Package Type:Surface Mount
Supplier Type:Agency
Media Available:datasheet
Drain-Source Voltage:-30V
Gate-Source Voltage:±12V
Drain Current-Continuous:-4.1A
Drain Current-Pulsed (Note 1):-30A
Maximum Power Dissipation:0.35W
Temperature Range:-55 To 150℃

XST-MOS-L3401 is a P-channel power MOSFET with high power and current handing capability, surface mount package, lead free product is acquired.It has the characteristics of high input impedance, low noise, good thermal stability and simple manufacturing process, etc. It is widely used in the circuit of electronic switch.

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	BVdss	Vgs=0V Id=-250μA	-30		-	V
Zero Gate Voltage Drain Current	Idss	Vds=-24V,Vgs=0V	-	-	-1	μA
Gate-Body Leakage Current	Igss	Vgs = ±1 0V,Vds=0V	-	-	±100	nA
On Characteristics (Note 3)
Gate Threshold Voltage	VGS(th)	Vds=Vgs ,Id=-250μA	-0.7	-1	-1.3	V
Drain-Source On-State Resistance	Rds(on)	Vgs=-10V, Id=-4.1A	-	48	65	mΩ
		Vgs =-4.5V,Id =-4A	-	56	75	mΩ
		Vgs=-2.5V, Id=-1A	-	72	85	mΩ
Forward Transconductance	Gfs	Vds=-5V,Id =-5A	7	-	-	S
Dynamic Characteristics(Note4)
Input Capacitance	Ciss	Vds=-15V,Vgs=0V, F=1.0MHz	-	954	-	PF
Output Capacitance	Coss		-	115	-	PF
Reverse Transfer Capacitance	Crss		-	77	-	PF
Switching Characteristics (Note 4)
Turn-on Delay Time	td(on)	Vgs=-10V;Vds=-15V, Rl=3.6Ω,Rgen=6Ω	-	7	-	nS
Turn-on Rise Time	tr		-	3	-	nS
Turn-Off Delay Time	td(off)		-	30	-	nS
Turn-Off Fall Time	tf		-	12	-	nS
Total Gate Charge	Qg	VDs=-1 5V, I d=-4.1 A, Vgs=-4.5V	-	8.5	-	nC
Gate-Source Charge	Qgs		-	1.8	-	nC
Gate-Drain Charge	Qgd		-	2.7	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)	Vsd	Vgs=0V,Is=-1A	.	.	-1	V

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