Laser Light Detector XST-82410 Four-quadrant Photoelectric Detection Preamplifier Series

XST-82410

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Model Number:XST-82410
Type:Laser Diode
Place of Origin:Guangdong, China
Brand Name:Xunster
Package Type:Through Hole
Brand:photoelectric detection preamplifier
Voltage - Peak Reverse (Max):13.5V
Operating Temperature:-40~+50℃
Mounting Type:Through Hole
Output voltage pulse width:100-140ns
The output resistance:50Ω
Maximum output voltage:2-2.5V
Cross talk between quadrants:3%
Dark noise:1.5mV
Decibels of decaying bias:15dB

Introduce
2410-X photoelectric detection preamplifier series is mainly based on the advanced semiconductor process production line owned by the company, using high-resistance silicon single crystal material as the chip substrate, the invention patent of anti-crosstalk between quadrows, using TO-25 package form, integrated with high signal-to-noise ratio, large dynamic preamplifier circuit, designed and developed by the company completely.
At present, there are 13 models of 2410-X photoelectric detection preamplifier series products, and its performance parameters are detailed in"Technical Index List". The component is mainly composed of Φ10mm four-quadrant Si-PIN detector chip and module circuit with gain control function. Different types of products have different gain series control function, which can respond to receive pulse width of 8ns and above laser pulse width signal, and the dynamic range is 60dB ~ 125dB. It is characterized by low noise, high responsiveness, low power consumption, large dynamic overload resistance, high integration and small volume.

Features
Photosensitive surface size: Φ10mm
Spectral response range: 400nm ~ 1100nm
High signal-to-noise ratio, high sensitivity, high precision
Large dynamic, small photoelectric crosstalk
High integration, small volume
Strong resistance to overload, stable and reliable performance

Application
Laser guidance and tracking
Laser positioning, displacement monitoring
Other photoelectric detection

Product model	Detector bias voltage (V)	Supply voltage (V)	First stage gain control voltage (V)	Secondary gain control voltage (V)	Operating temperature range (℃)	Storage temperature range (℃)
82410-X	65	13.5	13.5	13.5	-40~+50	-50~+70
82410-3	-230	13.5	-11	-	-40~+55	-45~+65
82410-4	-135	13.5	-11	-	-45~+60	-50~+70
82410-5	65	13.5	13.5	-	-40~+60	-45~+65
82410-7	80	13.5	13.5	-	-40~+50	-50~+65
82410-7A	80	13.5	13.5	13.5	-40~+50	-50~+65
82410-9	100	±5.5	-	-	-55~+85	-55~+85
82410-11	80	13.5	13.5	-	-45~+60	-50~+65
82410-11A	80	13.5	13.5	13.5	-45~+55	-55~+70
82410-12	65	13.5	13.5	13.5	-40~+60	-55~+70
82410-13	65	13.5	13.5	13.5	-40~+55	-55~+70
82410-15	65	13.5	13.5	13.5	-40~+60	-55~+70

Product model	Parameter name	symbol	Control series	Test conditions (TC=23±2℃)	Min.	Typ.	Max.	Unit
2410-X	The responsivity	Re	Secondary control	λ=1064nm; τ=20ns; VR=50V; VCC=12V	2.0×104	-	-	V/W
	Inconsistency of responsiveness between quadrants	δRe			-	-	8	%
	Output voltage pulse width	Tw			100	-	140	ns
	The output resistance	Ro			-	-	50	Ω
	Maximum output voltage	Vomax			2	-	2.5	V
	Cross talk between quadrants	SL			-	-	3	%
	Dark noise	Vnrms		VR=50V; VCC=12V	-	-	1.5	mV
	Decibels of first-stage gain attenuation	K1		λ=1064nm; τ=20ns; VR=50V; VCC=12V; V1=12V	25	-	-	dB
	The first-stage gain attenuation is inconsistent	δK1		λ=1064nm; τ=20ns; VR=50V; VCC=12V; V1=12V	-	-	2	%
	Decibels of secondary gain attenuation	K2		λ=1064nm; τ=20ns; VR=50V; VCC=12V; V1=12V; V2=12V	23	-		dB
	The secondary gain attenuation is inconsistent	δK2		λ=1064nm; τ=20ns; VR=50V; VCC=12V; V1=12V; V2=12V	-	-	4	%
	Decibels of decaying bias	K		λ=1064nm; τ=20ns; VCC=12V; V1=12V; V2=12V; VR =50V/1V	15	-	-	dB
	The drop bias attenuation is inconsistent	δK		λ=1064nm; τ=20ns; VCC=12V; V1=12V; V2=12V; VR =50V/1V	-	-	7	%
	Pulse polarity	-		Working state	-		-	-

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