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Low Power Loss and High Efficiency
Low Power Loss and High Efficiency
Low Power Loss and High Efficiency
Low Power Loss and High Efficiency
Low Power Loss and High Efficiency

30A 200V Low Power Loss and High Efficiency Schottky Diodes For Frequency Switch

XST-EJG-MBRF30200CT
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  • Model Number:XST-EJG-MBRF30200CT
  • Type:Schottky Diode
  • Place of Origin:Guangdong, China
  • Brand Name:Xunster
  • Package Type:Surface Mount
  • Supplier Type:Agency
  • Media Available:datasheet
  • Brand:Schottky Diode
  • Current - Average Rectified (Io):30A
  • Operating Temperature:-55to+150℃
  • Mounting Type:Surface Mount
  • Package / Case:TO-220F
  • Voltage - DC Reverse (Vr) (Max):200V
  • VRRM:200V
  • VR:200V
  • IF(AV):15A(Per Leg)
  • IF:30A(Per Device)
  • IFSM:250A
  • TJ:150℃
  • TSTG:-55to+150℃

XST-EJG-MBRF30200CT schottky diodes has the characteristics of common cathode structure, low power loss and high efficiency, low forward voltage drop, high surge capability, etc.

 

ParameterSymbolValueUnit
Maximum Repetitive Reverse VoltageVRRM200V
Maximum DC Reverse VoltageVR200V
Average Rectified Forward Current, Tc=120℃IF(AV)15(Per Leg)
30(Per Device)
A
Peak Forward Surge Current,8.3ms Half Sine waveIFSM250A
Operating Junction TemperatureTJ150℃
Storage Temperature RangeTSTG-55to+150℃

 

ParameterSymbolTest ConditionMinMaxUnit
Maximum Repetitive Reverse VoltageVRRMIR=100μA200.0 V
Reverse CurrentIRVR =200V Tc=25℃
VR =200V Tc=125℃
 0.1
5
mA
Forward VoltageVFIF=15A Tc=25℃
IF=15A Tc=125℃
IF=30A Tc=25℃
IF=30A Tc=125℃
 0.97
0.87
1.14
1.04
V